![]() Van der Waals heterostructures with high accuracy rotational alignment. Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene. Strain solitons and topological defects in bilayer graphene. Controlling domain wall motion in ferroelectric thin films. McGilly, L., Yudin, P., Feigl, L., Tagantsev, A. Domain wall motion in epitaxial Pb(Zr,Ti)O 3 capacitors investigated by modified piezoresponse force microscopy. Direct studies of domain switching dynamics in thin film ferroelectric capacitors. Barkhausen effect in stepped motion of a plane domain boundary in gadolinium molybdate. Y., Rumyantsev, E., Kuminov, V., Subbotin, A. Topological nature of dislocation networks in two-dimensional moiré materials. Aperiodic topological order in the domain configurations of functional materials. Antiferroelectrics: history, fundamentals, crystal chemistry, crystal structures, size effects, and applications. Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene. Twinning and twisting of tri- and bilayer graphene. Room-temperature ferroelectricity in CuInP 2S 6 ultrathin flakes. Ferroelectric switching of a two-dimensional metal. Atomic reconstruction in twisted bilayers of transition metal dichalcogenides. Interfacial ferroelectricity in marginally twisted 2D semiconductors. Twist angle-dependent atomic reconstruction and moiré patterns in transition metal dichalcogenide heterostructures. Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides. Relaxation and domain formation in incommensurate 2D heterostructures. Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides. Identifying the transition order in an artificial ferroelectric van der Waals heterostructure. Interfacial ferroelectricity by van der Waals sliding. Stacking-engineered ferroelectricity in bilayer boron nitride. Yasuda, K., Wang, X., Watanabe, K., Taniguchi, T. Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride. Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors. ![]() Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe 2/MoSe 2 bilayers. ![]() Binary compound bilayer and multilayer with vertical polarizations: two-dimensional ferroelectrics, multiferroics, and nanogenerators. Engineering symmetry breaking in 2D layered materials. Atomic-scale analysis of the pinning disorders provides structural insight on how to improve the switching speed of van der Waals FEs.ĭu, L. Domain wall pinnings by various disorders limit the domain wall velocity and cause Barkhausen noises in the polarization hysteresis loop. Exploiting stroboscopic operando transmission electron microscopy on the FE phase, we measure a maximum domain wall velocity of 300 μm s –1. As one decreases the twist angle, however, this transition occurs as the domain wall network disappears. We find that the topological protection, provided by the domain wall network, prevents the MDAF-to-FE transition. Here we performed an operando transmission electron microscopy investigation on twisted bilayer WSe 2 to observe the polar domain dynamics in real time. In this moiré domain antiferroelectic (MDAF) arrangement, the distribution of electric dipoles is distinguished from that of two-dimensional FEs, suggesting dissimilar domain dynamics. The moiré superlattice formed in the twisted stacks of van der Waals crystals exhibits polar domains alternating in moiré length with anti-aligned dipoles. Conventional antiferroelectric materials with atomic-scale anti-aligned dipoles undergo a transition to a ferroelectric (FE) phase under strong electric fields. ![]()
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